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| MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon P b Lead(Pb)-Free 4 5 6 3 2 1 65 4 1 2 3 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Symbol VCEO VCBO IC NPN+NPN Value 50 50 100 SOT-363(SC-88) Unit Vdc Vdc mAdc Thermal Characteristics Characteristics (1) Total Device Dissipation TA=25 C Symbol PD Max 187 (2) 256 (3) 1.5 (2) 2.0 (3) Unit mW mW/ C C/W C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature 1.One Junction Heated 2.FR-4 @ Minimum Pad 3.FR-4 @ 1.0 I 1.0 Inch Pad R JA TJ,Tstg 670(2) 490(3) -55 to +150 Device Marking and Resistor Values Device MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW I Marking 7A 7B 7C 7D 7E 7F 7G R1(K) 10 22 47 10 10 4.7 1.0 R2(K) 10 22 47 47 88 Device MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW Marking 7H 7J 7K 7L 7M 7N 7P R1(K) 2.2 4.7 4.7 22 2.2 100 47 R2(K) 2.2 4.7 47 47 47 100 22 1.0 http://www.weitron.com.tw WEITRON 1/6 Rev.A 29-Dec-05 MUN5211DW Series Electrical Characteristics (TA=25 C Unless Otherwise noted) Symbol Min Max Unit Characteristics Off C har acter istics Collector-Base Cutoff Current (VCB=50Vdc, I E =0) Collector-Emitter Cutoff Current(VCE=50Vdc, IB =0) Emitter-Base Cutoff Current (VEB =6.0Vdc, IC=0) MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW Collector-Base Breakdown Voltage (I C =10uAdc, IE =0) Collector-Emitter Breakdown Voltage(4) (I C=2.0mA, I B=0) 4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% I CBO I CEO I EBO - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 - nAdc nAdc mAdc V(BR)CBO V(BR)CEO 50 50 Vdc Vdc WEITRON http://www.weitron.com.tw 2/6 Rev.A 29-Dec-05 MUN5211DW Series Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit On Characteristics (4) DC Current Gain (IC= 5.0 mAdc, VCE=10Vdc) MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW HFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 - 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 - - Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 0.3mAdc) (IC= 10 mAdc, IB= 5.0mAdc) MUN5230DW/MUN5231DW (IC= 10 mAdc, IB= 1.0mAdc) MUN5215DW/MUN5216DW VCE(sat) 0.25 Vdc MUN5232DW/MUN5233DW/MUN5234DW Output Voltage (on) (VCC = 5.0 V, VB= 2.5V, R L =1.0 k ) (VCC = 5.0 V, VB= 3.5V, RL =1.0 k ) (VCC = 5.0 V, VB= 5.5V, RL =1.0 k ) (VCC = 5.0 V, VB= 4.0V, R L =1.0 k ) Output Voltage (off ) (VCC = 5.0 V, VB= 0.5V, R L =1.0 k ) (VCC = 5.0 V, VB= 0.05V, R L =1.0 k ) (VCC = 5.0 V, VB= 0.25V, R L =1.0 k ) MUN5211DW MUN5212DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5213DW MUN5236DW MUN5237DW VOL - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc VOL 4.9 Vdc MUN5230DW MUN5215DW MUN5216DW MUN5233DW 4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% http://www.weitron.com.tw WEITRON 3/6 Rev.A 29-Dec-05 MUN5211DW Series Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit On Characteristics (5) Input Resistor MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 1.0 0.1 0.47 0.047 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 k Resistor Ratio MUN5211DW/MUN5212DW MUN5213DW/MUN5236DW MUN5214DW MUN5215DW/MUN5216DW MUN5230DW/MUN5231DW/MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5237DW R1/R2 5. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% http://www.weitron.com.tw WEITRON 4/6 Rev.A 29-Dec-05 MUN5211DW Series 300 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) P D , P OWE R DIS S IPAT ION (mW) 250 200 150 100 50 0 - 50 R J A = 833 C /W 0 50 100 T A , AMB IE NT T E MP E R AT UR E ( C ) 150 1 IC/IB = 10 TA = -25 C 25 C 0.1 75 C 0.01 0.001 0 FIG 1. Derating Curve 1000 VCE = 10 V Cob , CAPACITANCE (pF) TA = 75 C 25 C -25 C 100 3 4 20 40 IC , COLLECTOR CURRENT (m A) 50 FIG 2. VCE(sat) versus IC hFE , DC CURRENT GAIN (NORMALIZED) f = 1 MHz IE = 0 V TA = 25 C 2 1 10 1 10 IC , COLLECTOR CURRENT (m A) 100 0 0 10 20 30 40 VR , REVERSE BIAS VOL TAGE (VOLTS) 50 FIG 3. DC Current Gain 100 75 C IC, COLLECTOR CURRENT (mA) 10 25 C TA = -25 C 10 VO = 0.2 V V in, INPUT VOLTAGE (VOLTS) FIG 4. Output Capacitance TA = -25 C 25 C 75 C 1 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.001 0.1 0 10 40 20 30 IC, COLLECTOR CURRENT (m A) 50 FIG 5. Output Current versus Input Voltage FIG 6. Input Voltage versus Output Current http://www.weitron.com.tw WEITRON 5/6 Rev.A 29-Dec-05 MUN5211DW Series SOT-363 Package Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON http://www.weitron.com.tw 6/6 Rev.A 29-Dec-05 |
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